1994. 5. 11 1/2 semiconductor technical data KTC3227 epitaxial planar npn transistor revision no : 0 general purpose application. features complementary to kta1274. maximum rating (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ characteristic symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5 v collector current i c 400 ma emitter current i e -400 ma collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 electrical characteristics (ta=25 1 ) note : h fe classification o:70~140, y:120~240. characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 100 na emitter-cut-off current i ebo v eb =5v, i c =0 - - 100 na collector-emitter breakdown voltage v (br)ceo i c =5ma, i b =0 80 - - v dc current gain h fe (1) (note) v ce =2v, i c =50ma 70 - 240 h fe (2) v ce =2v, i c =200ma 40 - - collector-emitter saturation voltage v ce(sat) i c =200ma, i b =20ma - - 0.4 v base-emitter voltage v be v ce =2v, i c =5ma 0.55 - 0.8 v transition frequency f t v ce =10v, i c =10ma - 100 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 10 - pf
1994. 5. 11 2/2 KTC3227 revision no : 0 collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta collector current i (ma) 0 c 0 base-emitter voltage v (v) be be c i - v 30 dc current gain h fe 500 100 3 1 collector current i (ma) c h - i collector-emitter saturation ce(sat) 0.01 500 100 3 1 collector current i (ma) c v - i i - v cce ce collector-emitter voltage v (v) 0 c 0 collector current i (ma) safe operating area ce collector-emitter voltage v (v) 0.5 1 3 200 c 3 collector current i (ma) 12345678 40 80 120 160 200 240 280 320 common emitter ta=25 c 3.5 3.0 2.5 2.0 1.5 1.0 i =0.5ma 0 b fe c 30 10 5 50 100 300 500 1k common emitter v =2v ce ta=100 c ta=25 c ta=-25 c ce(sat) c voltage v (v) 510 30 0.03 0.05 0.1 0.3 0.5 1 common emitter i /i =10 c b ta=100 c ta=25 c ta=-25 c 0.2 0.4 0.6 0.8 1.0 1.2 1.4 50 100 150 200 250 300 common emitter v =2v ce ta =100 c ta =25 c ta=-2 5 c p (w) 20 40 60 80 100 120 140 160 0.5 1.0 1.5 2.0 2.5 3.0 3.5 tc=ta ta=25 c 1 2 1 2 30 100 10 5 5 10 30 50 100 300 500 1k 2k single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature * i max.(pulsed) c * i max.(continuous) c 1ms * 10ms * 100ms * d c ope ra ti o n ( t a = 2 5 c ) v max. ceo
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